The effect of hydrogen annealing on oxygen precipitation behavior and gate oxide integrity in Czochralski Si wafers

Journal of the Electrochemical Society

Volumn 144, Issue 1, 1997, Pages 306-311

  Abe, Hidenobu ^a   Suzuki, Lsamu ^a   Koya, Hiroshi ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; DEGRADATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HYDROGEN; OXIDES; OXYGEN; POLISHING; PRECIPITATION (CHEMICAL); STABILITY; SURFACES;

CZOCHRALSKI SILICON WAFERS; DYNAMIC RANDOM ACCESS MEMORY THERMAL SIMULATION; GATE OXIDE INTEGRITY;

SILICON WAFERS;

EID: 0030837245     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837400     Document Type: Article

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