RF power characteristics of SiGe heterojunction bipolar transistor with high breakdown voltage structures

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 293-295

  Matsuno, Toshinobu ^a   Nishii, Katsunori ^b   Sonetaka, Shinichi ^a   Toyoda, Yasuyuki ^a   Iwamoto, Nobuyuki ^c  

^a Gemiconductor Device Research Center   (United States)

^b Discrete Device Division   (United States)

^c PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

HIGH BREAKDOWN VOLTAGE STRUCTURES; ION IMPLANTED COLLECTOR; SILICON GERMANIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036078578     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011615     Document Type: Article

References (4)

1. 1-W SiGe POWER HBT’s for mobile communication
2. A SiGe HBT power amplifier with 40% PAE for PCS CDMA applications
3. A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications
4. SiGe HBT power HBT’s for low-voltage, high-performance RF applications