Novel sidewall strained-Si channel nMOSFET

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 63-66

  Liu, K C ^a   Wang, X ^a   Quinones, E ^a   Chen, X ^a   Chen, X D ^a   Kencke, D ^a   Anantharam, B ^a   Chang, R D ^a   Ray, S K ^a   Oswal, S K ^a   Tu, C Y ^a   Banerjee, S K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER MOBILITY; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE MEASUREMENT; SIDEWALL CONDUCTION; SIDEWALL STRAINED SILICON MOSFET; SILICON GERMANIUM; TENSILE STRAIN; VALENCE BAND OFFSET CALCULATION;

MOSFET DEVICES;

EID: 0033347820     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)