Structural characterisation of erbium suicide thin films on an Si(111) substrate

Journal of Alloys and Compounds

Volumn 234, Issue 2, 1996, Pages 244-250

  Frangis, N ^a,c   Van Tendeloo, G ^a   Van Landuyt, J ^a   Muret, P ^b   Nguyen, T T A ^b  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Electron microscopy; Modulated structures; Silicides

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; ERBIUM COMPOUNDS; EVAPORATION; FILM GROWTH; SILICON; STOICHIOMETRY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ERBIUM SILICIDE;

METALLIC FILMS;

EID: 0042127102     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-8388(95)02131-0     Document Type: Article

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