Planar defects in epitaxial DySi2-x thin films on (111)Si

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 332-335

  Shen, G H ^a   Chen, J C ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); DYSPROSIUM COMPOUNDS; EPITAXIAL GROWTH; SILICON; STACKING FAULTS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

COALESCING ISLANDS; DYSPROSIUM SILICIDE; PLANAR DEFECTS;

THIN FILMS;

EID: 0032655906     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00649-7     Document Type: Article

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