Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition

Journal of Electronic Materials

Volumn 32, Issue 11, 2003, Pages 1335-1338

  Zhang, X B ^a   Heller, R D ^a   Noh, M S ^a   Dupuis, R D ^a   Walter, G ^b   Holonyak Jr , N ^b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

InAIP; MOCVD; Quantum dots

Indexed keywords

CATHODOLUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

INDIUM ALUMINUM PHOSPHIDE; MATRIX LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0348107252     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0032-3     Document Type: Article

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