GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3287, Issue , 1998, Pages 214-220

  Kung, Patrick ^a   Zhang, Xiaolong ^a   Walker, Danielle ^a   Saxler, Adam ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

GaN; p i n; Photodetector; Photodiode; Rejection ratio; Responsivity; Ultraviolet

Indexed keywords

DRY ETCHING; ENERGY GAP; FILM GROWTH; GALLIUM NITRIDE; INFRARED RADIATION; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTING MATERIALS; SPACE APPLICATIONS; THIN FILMS; ULTRAVIOLET DETECTORS; ULTRAVIOLET RADIATION;

SOLAR-BLIND ULTRAVIOLET (UV) PHOTODETECTORS;

PHOTODIODES;

EID: 0032224424     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304484     Document Type: Conference Paper

References (12)

1. Semiconductor ultraviolet detectors
2. Ultra-violet detectors for astrophysics, present and future
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4. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
5. AlGaN ultraviolet photoconductors grown on sapphire
6. 1-xN (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
7. Schottky barrier photoconductor based on Mg-doped p-type GaN films
8. Visible-blind ultraviolet photodetectors based on GaN p-n junctions
9. Photovoltaic effects in gaN structures with p-n junctions
10. Deep levels and persistent photoconductivity in GaN thin films
11. Kinetics of photoconductivity in n-type GaN photodetector