Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 746-752

  Sugiyama, M ^a   Kusunoki, K ^b   Shimogaki, Y ^a   Sudo, S ^a   Nakano, Y ^a   Nagamoto, H ^b   Sugawara, K ^c   Tada, K ^a   Komiyama, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b KOGAKUIN UNIVERSITY   (Japan)

^c NIHON UNIVERSITY   (Japan)

Author keywords

Decomposition; FT IR; III V compound semiconductor; MOVPE; Simulation

Indexed keywords

COMPUTER SIMULATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; MIXING; OPTIMIZATION; PYROLYSIS; REACTION KINETICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SURFACE PROPERTIES;

DIMETHYLZINC; TERTIARYBUTYLARSINE; TERTIARYBUTYLPHOSPHINE; TRIMETHYLINDIUM;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0031548611     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80176-6     Document Type: Article

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