Carbon-related centres in irradiated SiGe alloys

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 823-826

  Hayama, S ^a   Davies, G ^a   Tan, J ^a   Markevich, V P ^b   Peaker, A R ^b   Evans Freeman, J ^b   Vernon Parry, K D ^b   Abrosimov, N V ^c  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Defects; DLTS; Photoluminescence; SiGe alloys

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; ENTHALPY; IONIZATION; PHOTOLUMINESCENCE; SINGLE CRYSTALS;

ATOMIC CONFIGURATIONS; VALENCE BANDS;

SILICON ALLOYS;

EID: 0347764755     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.222     Document Type: Conference Paper

References (22)

1. Davies G., et al. Semicond. Sci. Technol. 2:1987;524.
2. Davies G. Physics Reports. 176:1989;83. (Review Section of Physics Letters).
3. Mooney P.M., et al. Phys. Rev. B. 15:1977;3836.
4. Lightowlers E.C., Safonov A.N. Mater. Sci. Forum. 258-263:1997;617.
5. Coutinho J., et al. Phys. Rev. B. 65:2002;014109.
6. Thonke K., et al. J. Phys. C: Solid State Phys. 18:1985;L795.
7. Dobaczewski L., et al. J. Appl. Phys. 76:1994;194.
8. Davies G. J. Phys. D: Appl. Phys. 4:1971;1340.
9. Davies G. Semicond. Semimetals. 51B:1998;1.
10. Safonov A.N., et al. Phys. Rev. B. 54:1996;4409.
11. Londos C.A. Semicond. Sci. Technol. 5:1990;645.
12. Irmsher K., et al. J Phys. C: Solid State Phys. 17:1984;6317.
13. Hallén A., et al. J. Appl. Phys. 79:1996;3906.
14. Goscinski K., et al. Phys. Rev. B. 63:2001;235309.
15. Das A., et al. Semicond. Sci. Technol. 3:1988;1177.
16. Mesli A., et al. Phys. Rev. B. 66:2002;045206.
17. Larsen A.N., et al. Phys. Rev. B. 64:2001;233202.
18. Weber J., Alonso M.I. Phys. Rev. B. 40:1989;5683.
19. Alex V., et al. J. Appl. Phys. 79:1996;6943.
20. Krüssmann R., et al. Phys. Stat. Sol. (b). 118:1983;275.
21. Markevich V.P., et al. Appl. Phys. Lett. 82:2003;2652.
22. Pedersen T.P.L., et al. Appl. Phys. Lett. 75:1999;4085.