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Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 179-182

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

(14) Marso, M a Javorka, P a Dikme, Y b Kalisch, H b Bernat J a Schafer C b,c Schineller, B c Hart, A V D a Wolter, M a Fox, A a Jansen, R H b Heuken, M b,c Kordos P a Luth H a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b RWTH AACHEN UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; ELECTRIC FREQUENCY MEASUREMENT; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; MAGNETIC VARIABLES MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

GATE LEAKAGE CURRENT; HALL MEASUREMENT; HALL MOBILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0347516441 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200303457 Document Type: Article

Times cited : (10)

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