Metalorganic chemical vapor deposition and characterizations of epitaxial MgxZn1-xO ( 0≤x≤0.33 ) films on r-sapphire substrates

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 316-323

  Muthukumar, S ^a   Chen, Y ^a   Zhong, J ^a   Cosandey, F ^a   Lu, Y ^a   Siegrist, T ^b  

^a Department of Electrical and Computer Engineering   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

CRYSTAL LATTICES; DIODES; ENERGY GAP; EPITAXIAL GROWTH; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR MATERIALS; SPECTROPHOTOMETERS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

BULK ACOUSTIC WAVES (BAW); SURFACE ACOUSTIC WAVES (SAW);

THIN FILMS;

EID: 0347415793     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.021     Document Type: Conference Paper

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