SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 367, Issue 1, 1996, Pages 45-55

Depth profile analysis of surfaces produced by annealing ultra-thin films of Au deposited on Si(100)

(4) Yang, G a,b Kim, J H c Yang, S c,d Weiss, A H a,c

a The University of Texas at Arlington (United States)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c UNIVERSITY OF TEXAS AT ARLINGTON (United States)

d NATIONAL SEMICONDUCTOR CORPORATION (United States)

Author keywords

Auger electron spectroscopy; Depth profiling; Gold; Metal semiconductor interfaces; Positron spectroscopy; Silicon

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SPUTTER DEPOSITION; SURFACE STRUCTURE; THIN FILMS;

ION SPUTTER DEPTH PROFILES; POSITRON SPECTROSCOPY;

GOLD;

EID: 0030284832 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(96)00862-X Document Type: Article

Times cited : (17)

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