Photolysis of CF3Cl adsorbed on Si(111)(7×7) surface by monochromatic synchrotron radiation

Journal of Chemical Physics

Volumn 112, Issue 20, 2000, Pages 9068-9082

  Wen, C R ^a   Chou, L C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347107335     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.481536     Document Type: Article

References (66)

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62. 0)(1/4s)(κ-1)/(κ+1)∼3.8 eV, where s is the distance (in angstroms) of the external charge from the surface plane, and κ is the dielectric constant of substrate. For the fluorinated Si, s is assumed to be ∼0.8 Å (roughly half the Si-F bond length): C. J. Wu and E. A. Carter, ibid. 45, 9065 (1992); B. Rempfer, H. Oberhammer, and N. Auner, J. Am. Chem. Soc. 108, 3893 (1986). The dielectric constant (κ) of Si is ∼11.9.
63. 0)(1/4s)(κ-1)/(κ+1)∼3.8 eV, where s is the distance (in angstroms) of the external charge from the surface plane, and κ is the dielectric constant of substrate. For the fluorinated Si, s is assumed to be ∼0.8 Å (roughly half the Si-F bond length): C. J. Wu and E. A. Carter, ibid. 45, 9065 (1992); B. Rempfer, H. Oberhammer, and N. Auner, J. Am. Chem. Soc. 108, 3893 (1986). The dielectric constant (κ) of Si is ∼11.9.
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