RF and microwave plasma for resist and post-etch polymer removal

Solid State Technology

Volumn 44, Issue 12, 2001, Pages 37-38+40+42

  Graff, W ^a   Matson, M ^a   Kellner, T ^a   Pluym, T ^a   Nelson, S O ^a  

^a NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; ELECTRIC PROPERTIES; ETCHING; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; MICROWAVES; PHOTORESISTS; POLYMERS; REMOVAL;

MICROWAVE PLASMA EXCITATION; POST-ETCH POLYMER REMOVAL; RADIO FREQUENCY PLASMA EXCITATION; TRANSISTOR GATE LEVEL;

PLASMA APPLICATIONS;

EID: 0035661292     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (9)

1. Plasma ashing moves into the mainstream
2. Combining microwave downstream and rf plasma technology for etch and clean applications
3. Dry process for the definition of sub-0.1μm W/TiN gates
4. 2O plasma downstream
5. A highly selective photoresist ashing by addition of ammonia to plasma containing carbon tetrafluoride
6. Resist-residue free down flow ashing by employing reaction of fluorine atoms with water vapor
7. Additive nitrogen effects on oxygen plasma downstream ashing