Electrical characteristics of proton-implanted vertical-cavity surface-emitting lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 11, 1998, Pages 2233-2239

  Ramaswamy, Ananth ^a,c,e   Van Der Ziel, Jan P ^a,d   Biard, J Robert ^b,d   Johnson, Ralph ^b   Tatum, Jim A ^b,d  

^a The University of Texas at Dallas   (United States)

^b Honeywell Micro Switch   (United States)

^c INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^d IEEE

^e UT Dallas ^*  (United States)

Author keywords

Laser measurements; Semiconductor device measurements; Semiconductor junctions; Semiconductor lasers

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ION IMPLANTATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTOR JUNCTIONS;

NONRADIATIVE RECOMBINATION MECHANISMS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0032205141     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.726619     Document Type: Article

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