Parallel patterning of mesoscopic ring arrays using nanochannel glass replica masks

Advanced Materials

Volumn 11, Issue 9, 1999, Pages 769-773

  Pearson, Douglas H ^a   Tonucci, Ronald J ^a   Bussmann, Konrad M ^a   Bolden, Elizabeth A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346816456     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4095(199906)11:9<769::AID-ADMA769>3.0.CO;2-I     Document Type: Article

References (39)

1. H. Chang, R. Grundbacher, D. Jovanovic, J. P. Leburton, I. Adesiada, J. Appl Phys. 1994, 76, 3209.
2. Y. Wang, S. Y. Chou, Appl. Phys. Lett. 1993, 63, 2257.
3. M. H. Devoret, D. Esteve, C. Urbina, Nature 1992, 360, 547.
4. I. W. Lyo, P. Avouris, Science 1989, 245, 1369.
5. V. L. Colvin, M. C. Schlamp, A. P. Alivisatos, Nature 1994, 370, 354.
6. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, A. Y. Cho, Science 1994, 264, 553.
7. H. Yokoyama, Science 1992, 256, 66.
8. J. L. Jewell, J. P. Harbison, A. Scherer, Sci. Am. 1991, 65, 86.
9. T. D. Brock, Membrane Filtration: A User's Guide and Reference Manual, Science Tech., Madison, WI 1983.
10. R. Parthasarathy, C. R. Martin, Nature 1994, 369, 298.
11. R. Gref, Y. Minamitake, M. T. Peracchia, V. Trubetskoy, V. Torchilin, R. Langer, Science 1994, 263, 1600.
12. F. K. Perkins, E. A. Dobisz, S. L. Brandow, J. M. Calvert, J. E. Kosakowski, C. R. K. Marrian, Appl. Phys. Lett. 1996, 68, 550.
13. T.-C. Shen, C. Wang, J. W. Lyding, J. R. Tucker, Appl. Phys. Lett. 1995, 66, 976.
14. M. J. Lercel, G. F. Redinbo, H. G. Craighead, C. W. Sheen, D. L. Allara, Appl. Phys. Lett. 1994, 65, 974.
15. E. S. Snow, P. M. Campbell, Science 1995, 270, 1639.
16. M. Wendel, S. Kuhn, H. Lorenz, J. P. Kotthaus, M. Holland, Appl. Phys. Lett. 1994, 65, 1775.
17. A. Majumdar, P. I. Oden, J. P. Carrejo, L. A. Nagahara, J. J. Graham, J. Alexander, Appl. Phys. Lett. 1992, 61, 2293.
18. Yun Kim, C. M. Lieber, Science 1996, 257, 375.
19. A. Kumar, G. M. Whitesides, Appl. Phys. Lett. 1993, 63, 2002.
20. A. Kumar, G. M. Whitesides, Science 1994, 263, 60.
21. Y. Xia, D. Qin, G. M. Whitesides, Adv. Mater. 1996, 8, 1015.
22. S. Y. Chou, P. R. Krauss, W. Zhang, L. Guo, L. Zhuang, J. Vac. Sci. Tech. B 1997, 15, 2897.
23. M. Winzer, M. Kleiber, N. Dix, R. Wiesendanger, Appl. Phys. A 1996, A63, 617.
24. C. R. Martin, Science 1994, 266, 1961.
25. M. Shiraki, Y. Wakui, T. Tokushima, N. Tsuya, IEEE Trans. Magn. 1985, Mag-21, 1465.
26. M. Saito, M. Kirihara, T. Taniguchi, M. Miyagi, Appl. Phys. Lett. 1989, 55, 607.
27. S. Kawai, R. Ueda, J. Electrochem. Soc. 1975, 122, 32.
28. H. Masuda, K. Fukuda, Science 1995, 268, 1466.
29. P. P. Nguyen, D. H. Pearson, R. J. Tonucci, K. Babcock, J. Electrochem. Soc. 1998, 145, 247.
30. A. D. Berry, R. J. Tonucci, M. Fatemi, Appl. Phys. Lett. 1996, 69, 2846.
31. D. U. Pearson, R. J. Tonucci, Science 1995, 270, 68.
32. D. H. Pearson, R. J. Tonucci, Adv. Mater. 1996, 8, 1031.
33. C. R. Eddy, Jr., R. J. Tonucci, D. H. Pearson, J. R. Meyer, C. A. Hoffman, in Proc. 7th Int. Conf. on Narrow Gap Semiconductors, (Ed: J. L. Reno), Institute of Physics Conf. Ser. No. 144, Philadelphia, PA 1995, p. 364.
34. C. R. Eddy, Jr., R. J. Tonucci, D. H. Pearson, Appl. Phys. Lett. 1995, 68, 1397.
35. R. J. Tonucci, B. L. Justus, A. J. Campillo, C. E. Ford, Science 1992, 255, 783.
36. The image in Figure l was digitized and analyzed using NIH Image (Version 1.49) after outlining the pores with a cursor to facilitate the processing. Pores near the edges of the SEM figure were not included in the analysis to avoid edge-distortion effects. Pore diameters were calculated by approximating the measured pore areas by circles of equal area.
37. The Si wafer was Cr coated to enhance adhesion of the ring structures to the substrate.
38. M. Itoh, M. Hori, J. Vac. Sci. Tech. B 1991, B9, 165.
39. As a rule of thumb, we typically do not prepare masks with aspect ratios greater than about one-to-one if shape uniformity is a primary concern.