Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 175-181

  Kadinski, L ^a   Merai, V ^a   Parekh, A ^a   Ramer, J ^a   Armour, E A ^a   Stall, R ^b   Gurary, A ^a   Galyukov, A ^c   Makarov, Yu ^c  

^a VEECO INSTRUMENTS INC   (United States)

^b EMCORE CORPORATION   (United States)

^c STR Inc   (United States)

Author keywords

A1. Computer simulation; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; COMPUTATIONAL METHODS; COMPUTER SIMULATION; FIELD EFFECT SEMICONDUCTOR DEVICES; GALLIUM NITRIDE; HEAT TRANSFER; LIGHT EMITTING DIODES; OPTIMIZATION; ORGANOMETALLICS; VAPOR PHASE EPITAXY;

REACTOR CHAMBERS; ROTATING DISC REACTORS (RDR);

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0346785327     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.083     Document Type: Conference Paper

References (6)

1. S. Guo, J. Ramer, L. Kadinski, M. Pophristic, D. Gotthold, I. Ferguson, "Manufacturing MOCVD Systems and III-Nitride Materials for Solid State Lighting", Solid State Lighting, SPIE, will be published.
2. Thompson A.G., Stall R.A., Zawadzki P., Evans G.H. J. Electron. Mater. 25:1996;1487.
3. Karpov S. J. Crystal Growth. 248:2003;1.
4. L. Kadinski, R. Birkhahn, J.P. Debray, R. Stall, A. Gurary, Modeling Analysis of GaN Deposition in MOCVD Vertical Rotating Disk Reactors, Proceedings of the IC MOVPE XI, Berlin, 2002, p. 154.
5. L. Kadinski, V. Merai, A. Parekh, J. Ramer, E.A. Armour, R. Stall, A. Gurary, A. Galyukov, Yu. Makarov, Modeling Analysis of GaN/InGaN Deposition in MOCVD Vertical Rotating Disk Reactors, Proceedings of the EW MOVPE X, Lecce, 2003, pp. 311-314.
6. E. Jakovlev, A. Lobanova, K. Mazaev, R. Talalaev, A. Galjukov, Yu. Makarov, D. Gotthold, L. Kadinski, B. Peres, Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating disk reactors, J. Crystal Growth 261 (2003).