2D-1D coupling in cleaved edge overgrowth

Physical Review Letters

Volumn 85, Issue 8, 2000, Pages 1730-1733

  De Picciotto, R ^a   Stormer, H L ^a,b   Yacoby, A ^a,c   Pfeiffer, L N ^a   Baldwin, K W ^a   West, K W ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Columbia University ^*  (United States)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CLEAVED EDGE OVERGROWTHS (CEO); CONDUCTANCE QUANTIZATION; MEAN FREE PATHS;

ELECTRON SCATTERING;

EID: 0034245869     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.1730     Document Type: Article

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