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Volumn 23, Issue 7, 1998, Pages 41-44
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Properties of dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2
a a a
a
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
ELECTRIC CONDUCTIVITY OF SOLIDS;
HALL EFFECT;
LIGHT SCATTERING;
ORDER DISORDER TRANSITIONS;
PHOTOCONDUCTIVITY;
POINT DEFECTS;
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTING SILVER COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
CHALCOPYRITES;
OPTICAL MATERIALS;
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EID: 0032120211
PISSN: 08837694
EISSN: None
Source Type: Journal
DOI: 10.1557/S0883769400029080 Document Type: Article |
Times cited : (34)
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References (10)
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