The integration of plasma enhanced atomic layer deposition (PEALD) of tantalum-based thin films for copper diffusion barrier applications

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 433-438

  Cheng, Degang ^a   Eisenbraun, Eric T ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; FILM PREPARATION; GROWTH (MATERIALS); METALLIZING; OXIDATION RESISTANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA ENHANCED ATOMIC LAYER DEPOSITION; TERBUTYLIMIDO TRISDIETHYLAMIDOTANTALUM;

TANTALUM COMPOUNDS;

EID: 0346308301     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e10.4     Document Type: Conference Paper

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