Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 466-473

  Mori, Kazuo ^a   Hatakeyama, Hiroshi ^a   Hamamoto, Kiichi ^a   Komatsu, Keiro ^a   Sasaki, Tatsuya ^a   Matsumoto, Takashi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Atmospheric pressure; InGaAsP; InP substrate; Metalorganic vapor phase epitaxy; Multiple quantum well; Narrow stripe selective growth

Indexed keywords

ATMOSPHERIC PRESSURE; ENERGY GAP; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SUBSTRATES;

FLATTENING MECHANISM; NARROW-STRIPE SELECTIVE GROWTH; STEP-FLOW GROWTH METHOD;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032477123     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00635-6     Document Type: Article

References (12)

1. T. Sasaki, M. Kitamura, I. Mito, J. Crystal Growth 132 (1993) 435.
2. K. Kudo, T. Sasaki, M. Yamaguchi, J. Crystal Growth 170 (1997) 634.
3. M. Suzuki, M. Aoki, T. Tsuchiya, T. Taniwatari, J. Crystal Growth 145 (1994) 249.
4. K. Kudo, H. Yamazaki, T. Sasaki, M. Yamaguchi, IEEE Photon. Technol. Lett. 9 (1997) 1313.
5. G. Zimmermann, A. Ougazzaden, A. Gloukhian, E.V.K. Rao, D. Delprat, A. Ramdane, A. Mircea, J. Crystal Growth 170 (1997) 645.
6. T. Matsumoto, T. Nakamura, J. Crystal Growth 145 (1994) 622.
7. L. Silvestre, A. Ougazzaden, D. Delprat, A. Ramdane, C. Daguet, G. Patriarche, J. Crystal Growth 170 (1997) 639.
8. K. Yamaguchi, K. Okamoto, Jpn. J. Appl. Phys. 30 (1991) L231.
9. V. Thevenot, V. Souliere, H. Dumont, Y. Monteil, J. Bouix, P. Regreny, T.-M. Due, J. Crystal Growth 170 (1997) 251.
10. S.N.G. Chu, R.A. Logan, T. Tanbun-Ek, J. Appl. Phys. 72 (1992) 4118.
11. N. Otsuka, M. Kito, Y. Yabuuchi, M. Ishino, Y. Matsui, J. Crystal Growth 170 (1997) 626.
12. S.H. Lee, G.B. Stringfellow, J. Appl. Phys. 83 (1998) 3620.