900-mW high brightness buried ridge lasers by selective area epitaxy

IEEE Photonics Technology Letters

Volumn 14, Issue 4, 2002, Pages 441-443

  Swint, R B ^a   Huber, A E ^a   Yeoh, T S ^a   Woo, C Y ^a   Coleman, J J ^a   Faircloth, B O ^b   Zediker, M S ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b Nuvonyx Inc   (United States)

Author keywords

High power; InGaAs quantum well; Semiconductor laser; Single lateral mode

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

BURIED RIDGE LASERS;

HIGH POWER LASERS;

EID: 0036538961     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.992571     Document Type: Article

References (12)

1. Greater than 500-mW CW kink-free single transverse mode operation of weakly index guided buried stripe type 980 nm laser
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4. 8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers
5. High-power (> 10W) continuous-wave operation from 100 μm aperture 0.97 μm emitting Al-free diode lasers
6. The impact of LOC structures on 670-nm (Al)GaInP high-power lasers
7. Self stabilization of the fundamental lateral mode in index-guided semiconductor lasers
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10. Study of strained-layer InGaAs/GaAs SQW RW lasers including analysis of internal coupling of modes and antiguiding effects
11. Beam instability in 980-nm power lasers: Experiment and analysis