Fe3GaAs/GaAs(0 0 1): A stable and magnetic metal-semiconductor heterostructure

Thin Solid Films

Volumn 446, Issue 1, 2004, Pages 6-11

  Lepine B ^a   Lallaizon, C ^a   Schieffer, P ^a   Guivarc'h, A ^a   Jezequel G ^a   Rocher, A ^b   Abel, F ^c   Cohen, C ^c   Deputier S ^d   Nguyen Van Dau, F ^a  

^a CNRS   (France)

^b CEMES CNRS   (France)

^c INSTITUT DES NANOSCIENCES DE PARIS   (France)

^d Laboratoire de Chimie du Solide et Inorganique Moleculaire de Rennes   (France)

Author keywords

Gallium arsenide; Iron; Magnetic properties; Solid phase epitaxy

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; HETEROJUNCTIONS; INTERFACES (MATERIALS); IRON COMPOUNDS; MAGNETIC FIELD EFFECTS; PHASE DIAGRAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SINGLE CRYSTALS; TERNARY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

GRADIENT FIELD MAGNETOMETRY; METALLIC LAYERS; SOLID PHASE EPITAXY; SOLID-STATE INTERDIFFUSIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0346151199     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01232-X     Document Type: Article

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