Epitaxial growth of Fe on Fe/GaAs(001) reacted layers

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 319-323

  Lallaizon, C ^a   Lepine B ^a   Ababou, S ^a   Schussler, A ^a   Quemerais A ^a   Guivarc'h, A ^a   Jezequel G ^a   Deputier S ^b   Guerin R ^b  

^a CNRS   (France)

^b Laboratoire de Chimie du Solide et Inorganique Moleculaire de Rennes   (France)

Author keywords

Contact metal semiconductor; Epitaxy; Fe; GaAs; Ternary compound

Indexed keywords

ANNEALING; DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); IRON; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES; X RAY PHOTOELECTRON SPECTROSCOPY;

TERNARY COMPOUND;

METALLIC FILMS;

EID: 4244001748     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00450-9     Document Type: Article

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