Digital alloy interface grading of an InAlAs/InGaAs quantum cascade laser structure studied by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4131-4133

  Offermans, P ^a   Koenraad, P M ^a   Wolter, J H ^a   Beck, M ^b   Aellen, T ^b   Faist, J ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Universite de Neuchatel Institut de Physique   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; CURRENT DENSITY; INTERFACES (MATERIALS); LUMINESCENCE; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY; DIGITAL ALLOY; QUANTUM CASCADE LASER; QUANTUM CONFINEMENT; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0346150198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1627942     Document Type: Article

References (7)

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