Cryogenic operation of surface-channel diamond field-effect transistors

Diamond and Related Materials

Volumn 12, Issue 10-11, 2003, Pages 1800-1803

  Ishizaka, Hiroaki ^a,b   Tachiki, Minoru ^a,b   Song, Kwang Soup ^a,b   Umezawa, Hitoshi ^a,b   Kawarada, Hiroshi ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Cryogenic temperature; Hydrogen terminated diamond; MISFET

Indexed keywords

CRYOGENICS; GATES (TRANSISTOR); MISFET DEVICES; PHONONS; TRANSCONDUCTANCE;

PHONON SCATTERING;

INDUSTRIAL DIAMONDS;

DIAMOND;

EID: 0346119975     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(03)00208-5     Document Type: Article

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