GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 394-398

  Alt, H Ch ^a   Gomeniuk, Y V ^a   Lenk, G ^b   Wiedemann, B ^c  

^a MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

GaAs; GaAsN; Local mode spectroscopy; Nitrogen related defects

Indexed keywords

DEFECTS; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; ISOTOPES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR VIBRATIONS; NITROGEN; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

LOCAL MODE SPECTROSCOPY; NITROGEN-RELATED DEFECTS; WAVE NUMBERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0345873474     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.10.004     Document Type: Conference Paper

References (14)

1. Weyers M., Sato M., Ando H. Jpn. J. Appl. Phys. 31:1992;L853.
2. Kondow M., et al. IEEE J. Sel. Top. Quantum Electron. 3:1997;719.
3. Kent P.R.C., Zunger A. Phys. Rev. B. 64:2001;115208.
4. H.Ch. Alt, B. Wiedemann, K. Bethge, in: Materials Science Forum, Vols. 258-263, Trans Tech, Zurich, 1997, pp. 867-871.
5. Alt H.Ch., et al. Appl. Phys. Lett. 77:2000;3331.
6. Kachare A.H., et al. J. Appl. Phys. 44:1973;4393.
7. Alt H.Ch., et al. Semicond. Sci. Technol. 18:2003;303.
8. Shan W., et al. Appl. Phys. Lett. 75:1999;1410.
9. Yu K.M., et al. Appl. Phys. Lett. 80:2002;3958.
10. Gärtner G., et al. J. Crystal Growth. 198/199:1999;355.
11. Sangster M.J.L., et al. Semicond. Sci. Technol. 7:1992;1295.
12. M. Jurisch, et al., in: Proceedings of the 26th International Symposium Compound Semiconductors, Berlin, 1999, Inst. Phys. Conference Ser. No. 166, Berlin, 2000, pp. 13-22.
13. Janotti A., et al. Phys. Rev. B. 67:2003;161201.
14. H.Ch. Alt, et al., to be published.