AlGaAs/GaAs quantum wires with high photoluminescence thermal stability

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 5059-5061

  Liu, X Q ^a   Wang, X L ^a   Ogura, M ^a   Guillet, T ^b   Voliotis, V ^b   Grousson, R ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; MONOCHROMATORS; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; THERMODYNAMIC STABILITY;

FULL WIDTH AT HALF MAXIMUM; LASER ABSORPTION COEFFICIENT; TRIETHYLGALLIUM; TRIMETHYLALUMINUM;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0345872391     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633679     Document Type: Article

References (16)

1. H. Sakaki, Jpn. J. Appl. Phys., Part 2 19, L735 (1980).
2. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
3. For recent progresses, see, for example, Abstracts of the First International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics, Tsukuba, Japan, 2001.
4. X.-L. Wang, M. Ogura, and H. Matsuhata, Appl. Phys. Lett. 67, 1506 (1995).
5. X.-L. Wang, M. Ogura, and H. Matsuhata, J. Cryst. Growth 195, 586 (1998).
6. X.-L. Wang, M. Ogura, and H. Matsuhata, Appl. Phys. Lett. 67, 3629 (1995).
7. T. G. Kim, X.-L. Wang, Y. Suzuki, K. Komori, R. Kaji, M. Shimizu, K. Hikosaka, and M. Ogura, IEEE J. Sel. Top. Quantum Electron. 6, 511 (2000).
8. X.-L. Wang and M. Ogura, J. Cryst. Growth 221, 556 (2000).
9. T. Guillet, R. Grousson, V. Voliotis, X.-L. Wang, and M. Ogura, Phys. Rev. B 68, 045319 (2003).
10. X.-Q. Liu, X.-L. Wang, and M. Ogura, Appl. Phys. Lett. 79, 1622 (2001).
11. J. Bellessa, V. Voliotis, R. Grousson, X.-L. Wang, M. Ogura, and H. Matsuhata, Phys. Rev. B 58, 9933 (1998).
12. K. Tamamura, J. Ogawa, K. Akimoto, Y. Mori, and C. Kojima, Appl. Phys. Lett. 50, 1149 (1987).
13. D. S. Citrin, Phys. Rev. Lett. 69, 3393 (1992).
14. J. Feldmann, G. Peter, E. O. Göbel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliott, Phys. Rev. Lett. 59, 2337 (1987).
15. Free excitons in a QWL should show a much faster low-temperature radiative recombination lifetime than those in a QWR due to the reduced coherence volume in a QWR (Refs. 13 and 14). However, a comparable radiative recombination lifetime is usually observed for a QWL and a QWR with similar dimensions due to the existence of exciton localization at low temperatures in practical QWL samples.
16. S. Nojima, Phys. Rev. B 46, 2302 (1992).