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Volumn 1, Issue SUPPL. 1, 2001, Pages 129-133

Fabricating an all-epitaxial silicon quantum computer

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; GROUND STATE; LITHOGRAPHY; PHOSPHORUS COMPOUNDS; SILICON; SINGLE ELECTRON TRANSISTORS; TEMPERATURE;

EID: 0345857846     PISSN: 15337146     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (15)
  • 1
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    • A silicon-based nuclear spin quantum computer
    • B.E. Kane, "A silicon-based nuclear spin quantum computer", Nature 393, 133 (1998).
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    • Kane, B.E.1
  • 3
    • 0000010085 scopus 로고
    • Scanning tuneling microscopy of the interaction of hydrogen with silicon surfaces
    • For a review, see J. J. Boland, "Scanning tuneling microscopy of the interaction of hydrogen with silicon surfaces", Adv. Phys. 42, 129 (1993).
    • (1993) Adv. Phys. , vol.42 , pp. 129
    • Boland, J.J.1
  • 4
    • 0000417353 scopus 로고
    • Atomic scale conversion of clean Si(111):H-1x1 to Si(111)-2x1 by electron-stimulated desorption
    • R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, "Atomic scale conversion of clean Si(111):H-1x1 to Si(111)-2x1 by electron-stimulated desorption", Phys. Rev. Lett. 65, 1917 (1990).
    • (1990) Phys. Rev. Lett. , vol.65 , pp. 1917
    • Becker, R.S.1    Higashi, G.S.2    Chabal, Y.J.3    Becker, A.J.4
  • 6
    • 0031275319 scopus 로고    scopus 로고
    • Electron stimulated desorption induced by the scanning tunneling microscope
    • T.-C. Shen and P. Avouris, "Electron stimulated desorption induced by the scanning tunneling microscope", Surf. Sci. 390, 35 (1997).
    • (1997) Surf. Sci. , vol.390 , pp. 35
    • Shen, T.-C.1    Avouris, P.2
  • 8
    • 0001699877 scopus 로고    scopus 로고
    • The initial stage of nucleation and growth of Al on H/Si(100)-1x1 by dimethylaluminum hydride vapor deposition
    • T.-C. Shen, C. Wang, and J. R. Tucker, "The initial stage of nucleation and growth of Al on H/Si(100)-1x1 by dimethylaluminum hydride vapor deposition" Appl Surf. Sci. 141, 228 (1999).
    • (1999) Appl Surf. Sci. , vol.141 , pp. 228
    • Shen, T.-C.1    Wang, C.2    Tucker, J.R.3
  • 9
    • 0001186215 scopus 로고    scopus 로고
    • Al nucleation on monohydride and bare Si(001) surfaces: Atomic scale patterning
    • T.-C. Shen, C. Wang, and J. R. Tucker, "Al nucleation on monohydride and bare Si(001) surfaces: atomic scale patterning", Phys. Rev. Lett. 78, 1271 (1997).
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 1271
    • Shen, T.-C.1    Wang, C.2    Tucker, J.R.3
  • 10
    • 0002797825 scopus 로고    scopus 로고
    • Interaction of Ga adsorbates with dagling bonds on the hydrogen terminated Si(100) surface
    • Hashizume, T., et al. Interaction of Ga adsorbates with dagling bonds on the hydrogen terminated Si(100) surface. Japan J. Applied Physics 1996; 35: L-1085-1088.
    • (1996) Japan J. Applied Physics , vol.35
    • Hashizume, T.1
  • 11
    • 0032116551 scopus 로고    scopus 로고
    • Prospects for atomically ordered device structures based on STM lithography
    • J. R. Tucker and T.-C. Shen, "Prospects for atomically ordered device structures based on STM lithography", Solid State Electronics 42, 1061 (1998).
    • (1998) Solid State Electronics , vol.42 , pp. 1061
    • Tucker, J.R.1    Shen, T.-C.2
  • 12
    • 0001338531 scopus 로고
    • An atomically resolved STM study of the interaction of phosphine with the silicon (001) surface
    • Y. Wang, M. J. Bronikowski, and R. J. Hamers, "An atomically resolved STM study of the interaction of phosphine with the silicon (001) surface", J. Phys. Chem. 98, 5966 (1994).
    • (1994) J. Phys. Chem. , vol.98 , pp. 5966
    • Wang, Y.1    Bronikowski, M.J.2    Hamers, R.J.3
  • 15
    • 0001412445 scopus 로고
    • H coverage dependence of Si(100) homoepitaxy
    • M. Copel and R. M. Tromp, "H coverage dependence of Si(100) homoepitaxy", Phys. Rev. Lett. 72, 1236 (1994).
    • (1994) Phys. Rev. Lett. , vol.72 , pp. 1236
    • Copel, M.1    Tromp, R.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.