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Volumn 141, Issue 3-4, 1999, Pages 228-236
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The initial stage of nucleation and growth of Al on H/Si(100)-1×1 by dimethylaluminum hydride vapor deposition
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Author keywords
61.16.Ch; 68.35.Bs; 81.15 Gh; 81.65 Cf; 85.40.Ux; AJ; Aluminum; CKD; Dimethylaluminum hydride; HF; Hydrogen; SBA; Scanning tunnelling microscopy; Silicon; Surface morphology
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Indexed keywords
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EID: 0001699877
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(98)00509-1 Document Type: Article |
Times cited : (9)
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References (30)
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