Fourier transformed photoreflectance characterization of interface electric fields in GaAs/GaInP heterojunction bipolar transistor wafers

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6487-6490

  Kita, T ^a   Kakutani, T ^a   Wada, O ^a   Tsuchiya, T ^b   Sahara, M ^b   Sakaguchi, H ^b  

^a KOBE UNIVERSITY   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ENERGY GAP; FOURIER TRANSFORMS; OSCILLATIONS; PHOTONS; POISSON EQUATION; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

EMITTER-BASE INTERFACE; FOURIER TRANSFORMED PHOTOREFLECTANCE (PR) SPECTROSCOPY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0345377642     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1623327     Document Type: Article

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