Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400-700 °C

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 385-391

  Antonova, I V ^a   Gulyev, M B ^b   Safronov, L N ^a   Smagulova, S A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NORTH EASTERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

Electron irradiation; Inhomogeneity; Silicon; Thermal acceptors; Thermal donors

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY; ELECTRON IRRADIATION;

THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 0345352834     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00914-0     Document Type: Conference Paper

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