Reciprocal space mapping of implanted AIIIBV semiconductor compounds

Journal of Alloys and Compounds

Volumn 362, Issue 1-2, 2004, Pages 297-300

  Wieteska, K ^a   Wierzchowski, W ^b   Graeff, W ^c   Kuri, G ^c   Misiuk, A ^b   Turos, A ^b   Gawlik, G ^b  

^a INSTITUTE OF ATOMIC ENERGY   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c DESY   (Germany)

Author keywords

AIIIBV semiconductors; Ion implantation

Indexed keywords

ANNEALING; HIGH PRESSURE EFFECTS; ION IMPLANTATION; PROTONS; SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE;

RECIPROCAL SPACE MAPS; ROCKING CURVES;

SEMICONDUCTOR MATERIALS;

EID: 0345328817     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(03)00602-9     Document Type: Conference Paper

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