Nitrogen radical adsorption on InAs (001) surface studied by scanning tunneling microscopy and x-ray photoelectronic spectroscopy

Applied Physics Letters

Volumn 73, Issue 25, 1998, Pages 3754-3756

  Kasu, M ^a   Kobayashi, N ^a   Tanaka, H ^b   Mikami, O ^b  

^a NTT Basic Research Laboratories   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345164139     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122884     Document Type: Article

References (12)

1. R. Notzel, J. Temmyo, and T. Tamamura, Nature (London) 369, 131 (1994).
2. M. Kasu, T. Makimoto, and N. Kobayashi, Jpn. J. Appl. Phys., Part 1 36, 3821 (1997).
3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 248; in the calculation we assumed a built-in potential of 0.8 V.
4. T. Gemmeren, S. R. Salmagne, and W. Monch, Appl. Surf. Sci. 65/66, 625 (1993).
5. M. Kasu, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. 68, 955 (1996).
6. M. Kasu, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. 70, 1161 (1997).
7. During cooling of the sample from 350 °C to RT, In-stabilized (4×2) surface was changed to As-stabilized (2×4) surface by background As adsorption.
8. R. J. Hauenstein, D. A. Collins, X. P. Cai, M. L. O'Steen, and T. C. McGill, Appl. Phys. Lett. 66, 2861 (1995).
9. O. Brandt, H. Yang, B. Jenichen, Y. Suzuki, L. Daweritz, and K. H. Ploog, Phys. Rev. B 52, R2253 (1995).
10. S. Gwo, H. Tokumoto, and S. Maw, Appl. Phys. Lett. 71, 362 (1997).
11. Amorphous nitrided GaAs was formed at 250 °C in Ref. 2, and at 100 °C here. It seems that amorphous phase in 100 °C nitrided GaAs surface was more than that in 250 °C nitrided GaAs surface.
12. J. A. Stroscio and R. M. Feenstra, Scanning Tunneling Microscopy, edited by J. A. Stroscio (Academic, San Diego, 1993), p. 95.