Laser interferometric method for ns-time scale thermal mapping of smart power ESD protection devices during ESD stress

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 925-930

  Frbock C ^a   Litzenberger, M ^a   Pogany, D ^a   Gornik, E ^a   Seliger, N ^b   Muller Lynch T ^c   Stecher, M ^c   Gossner H ^c   Werner, W ^c  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b SIEMENS AG   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILE ELECTRONIC EQUIPMENT; INTERFEROMETRY; LASERS; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; THERMODYNAMICS;

BASE; ELECTROSTATIC DISCHARGE PROTECTION DEVICE; EMITTER; THERMAL MAPPING; THERMO OPTIC EFFECT;

TRANSISTORS;

EID: 0345072539     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00124-9     Document Type: Article

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