Internal characterization of IGBTs using the backside laser probing technique - interpretation of measurement by numerical simulation

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 199-202

  Thalhammer, R ^a   Fuerboeck, C ^a   Seliger, N ^a   Deboy, G ^a   Gornik, E ^a   Wachutka, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); LASER APPLICATIONS; TEMPERATURE MEASUREMENT;

BACKSIDE LASER PROBING TECHNIQUE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0031617643     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)