Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine

Journal of the Electrochemical Society

Volumn 146, Issue 6, 1999, Pages 2344-2352

  O'Neil, Patricia A ^a   Öztürk, Mehmet C ^a   Batchelor, Alan D ^b   Xu, Meimei ^b   Maher, Dennis M ^b  

^a North Carolina State University   (United States)

^b Dept of Mat Sci and Engineering ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FILMS; INTERFACES (MATERIALS); MORPHOLOGY; SILANES; SILICA; SILICON; SURFACE ROUGHNESS; SURFACES;

DISILANE; EPITAXIAL STRUCTURE; EPITAXY SUBSTRATE INTERFACE; GROWTH RATE; SELECTIVE SILICON EPITAXIAL GROWTH; ULTRAHIGH VACUUM RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

OXYGEN;

EID: 0345045522     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391938     Document Type: Article

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