Photonic Gated-Diode Method for Extracting the Energy-Dependent and the Spatial Distributions of Interface States in MOSFETs

Journal of the Korean Physical Society

Volumn 43, Issue 5 II, 2003, Pages 879-886

  Chi, S S ^a   Kim, H T ^a   Kim, M S ^a   Kim, T E ^a   Shin, H T ^a   Park, H S ^a   Kim, D J ^a   Min, K S ^a   Kang, D W ^a   Kim, D M ^a  

^a Kookmin University   (South Korea)

Author keywords

Interface state; MOS capacitor; MOSFET; Optical; Photonic

Indexed keywords

EID: 0344982783     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.43.879     Document Type: Article

References (11)

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