Characterization of interface states in MOS systems by using photonic high-frequency capacitance-voltage responses

Journal of the Korean Physical Society

Volumn 41, Issue 6, 2002, Pages 892-895

  Song, S J ^a   Kim, H T ^a   Chi, S S ^a   Kim, M S ^a   Chang, W S ^a   Cho, S D ^a   Shin, H T ^a   Kim, T E ^a   Kang, H J ^a   Kim, D J ^a   Kim, D M ^a  

^a Kookmin University   (South Korea)

Author keywords

C V; Interface trap density(Dit); MOS; Photonic C V

Indexed keywords

EID: 0036951995     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (7)

1. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
2. T. Hori, Gate Dielectrics and MOS ULSIs (Springer, New York, 1997).
3. W. K. Sun and H. S. Shin, J. Korean Phys. Soc. 40, 636 (2002).
4. H. C. Kim, H. T. Kim, S. D. Cho, S. J. Song, Y. C. Kim, S. K. Kim, S. S. Chi, D. J. Kim and D. M. Kim, J. Korean Phys. Soc. 40, 64 (2002).
5. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998).
6. D. M. Kim, H. C. Kim and H. T. Kim, submitted to IEEE Trans. Electron. Devices.
7. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, United kingdom, 1998).