Low ohmic contact resistance of GaN by employing XeCL excimer laser

Materials Research Society Symposium - Proceedings

Volumn 764, Issue , 2003, Pages 251-256

  Lee, Seung Chul ^a   Her, Jin Cherl ^a   Han, Sang Myun ^a   Seo, Kwang Seok ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC LINES; ELECTRIC RESISTANCE; EXCIMER LASERS; LASER BEAM EFFECTS; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SPUTTER DEPOSITION;

LASER ANNEALING; TRANSMISSION LINE MEASUREMENT (TLM);

GALLIUM NITRIDE;

EID: 0344927806     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-764-c3.52     Document Type: Conference Paper

References (8)

1. J. Burn, K. Chu, W. A. Davis, Appl. Phys. Lett. 70, pp 464, 1997
2. S. D. Wolter, B. P. Luther, S. E. Mahoney, Solid State Lett. 2, 151, 1999
3. B. P. Luther, S. E. Mahoney, T. N. Jackson, Appl. Phys. Lett. 70(1), pp 57-59 ,1997
4. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen and H. Morkoc, Appl. Phys. Lett. 64, pp 1003-1005 ,1994
5. C. T. Lee, Y, J, Lin, C. H. Lin, JAP Vol. 92, pp. 3825-3829, 2002
6. C. C. Lee, M. S. Yeh, S. D. Lin, SSDM, pp. 518-519, 2002
7. C. Lu, H. Chen, X. Lv and X. Xie, JAP Vol. 91 pp. 9218-9224, 2002
8. S. M. Sze, Physics of semiconductor devices ,(Wiley, Newyork) 1981, p. 304,