Enhancement of Ru nucleation in Ru-metal organic chemical vapor deposition by electron cyclotron resonance plasma pretreatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5539-5542

  Choi, Kyunsuk ^a   Lim, Jongmin ^a   Roy, Sudipta ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

MOCVD; Plasma treatment; Precleaning; Ru metallization; TiN

Indexed keywords

ARGON; AUGER ELECTRON SPECTROSCOPY; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OXYGEN; PLASMA APPLICATIONS; RUTHENIUM; SURFACE TREATMENT; X RAY DIFFRACTION ANALYSIS;

PLASMA TREATMENT; TITANIUM NITRIDE FILM;

TITANIUM NITRIDE;

EID: 0344925593     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5539     Document Type: Article

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