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Volumn 3, Issue 11, 2003, Pages 1537-1540

Capillarity Induced Negative Pressure of Water Plugs in Nanochannels

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE;

EID: 0344688277     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl034676e     Document Type: Article
Times cited : (184)

References (26)
  • 10
    • 0344110008 scopus 로고    scopus 로고
    • note
    • Nanochannels were fabricated by the sacrificial layer method on a fused silica substrate wafer, using a tetra-ethyl-ortho-silicate (TEOS) silicon oxide layer as the channel capping. Channels with a length of approximately 375 μm were etched by dissolving a polysilicon sacrificial layer in a 5% tetra-methyl-ammonium-hydroxide (TMAH) solution, with additives to increase selectivity and etch speed. Channels were dried by first replacing the etchant by water, subsequently replacing the water by isopropyl alcohol (both replacements were carried out by diffusion, as rinsing is practically difficult in these small channels), and finally evaporating the alcohol during spinning of the wafer. The sacrificial layer method produces slightly tapered channels of approximately 200 nm height at the entrance down to 86 nm, the initial polysilicon thickness, at the channel end.
  • 11
    • 0344110005 scopus 로고    scopus 로고
    • note
    • To fill the channel, a droplet of deionized water (0.08 μS/cm) was deposited on the channel entrance by careful handling using a syringe with a needle (Microlance 0, 3 x 13 mm). After filling of the channel, the water was removed from the entrance by capillary suction of a tissue. After this, the water in the channel would evaporate in a few minutes. During the final stage of the drying process, the remaining water plug with the peculiarly shaped menisci stayed in the most narrow part of the slightly tapered channel.
  • 13
    • 0344110001 scopus 로고    scopus 로고
    • note
    • e is equal to the initial channel height, which at the position of the left meniscus of Figure 1, has a value of 108 ± 11 nm.
  • 14
    • 0345403977 scopus 로고    scopus 로고
    • note
    • 2)). The error margins we used in the calculations are typically the 3σ values. To determine the mean value and the standard deviation σ we performed repeated measurements of radii of curvature, channel height, and initial center deflection. The error margins for the Young's modulus, capping layer thickness, and contact angle were estimated.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.