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0344110008
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note
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Nanochannels were fabricated by the sacrificial layer method on a fused silica substrate wafer, using a tetra-ethyl-ortho-silicate (TEOS) silicon oxide layer as the channel capping. Channels with a length of approximately 375 μm were etched by dissolving a polysilicon sacrificial layer in a 5% tetra-methyl-ammonium-hydroxide (TMAH) solution, with additives to increase selectivity and etch speed. Channels were dried by first replacing the etchant by water, subsequently replacing the water by isopropyl alcohol (both replacements were carried out by diffusion, as rinsing is practically difficult in these small channels), and finally evaporating the alcohol during spinning of the wafer. The sacrificial layer method produces slightly tapered channels of approximately 200 nm height at the entrance down to 86 nm, the initial polysilicon thickness, at the channel end.
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11
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0344110005
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To fill the channel, a droplet of deionized water (0.08 μS/cm) was deposited on the channel entrance by careful handling using a syringe with a needle (Microlance 0, 3 x 13 mm). After filling of the channel, the water was removed from the entrance by capillary suction of a tissue. After this, the water in the channel would evaporate in a few minutes. During the final stage of the drying process, the remaining water plug with the peculiarly shaped menisci stayed in the most narrow part of the slightly tapered channel.
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13
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0344110001
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note
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e is equal to the initial channel height, which at the position of the left meniscus of Figure 1, has a value of 108 ± 11 nm.
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14
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0345403977
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note
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2)). The error margins we used in the calculations are typically the 3σ values. To determine the mean value and the standard deviation σ we performed repeated measurements of radii of curvature, channel height, and initial center deflection. The error margins for the Young's modulus, capping layer thickness, and contact angle were estimated.
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16
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0001226865
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