Interaction of hydrogen (deuterium) molecules with interstitial oxygen atoms in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 26-30

  Markevich, V P ^a,b   Suezawa, M ^a   Murin, L I ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; HYDROGEN; LIGHT ABSORPTION; OXYGEN; REACTION KINETICS;

ISOTHERMAL ANNEALING;

SILICON;

EID: 0344641925     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00269-4     Document Type: Article

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