Melting Point Enhancement of a Self-Assembled Monolayer Induced by a van der Waals Bound Capping Layer

Langmuir

Volumn 19, Issue 24, 2003, Pages 10004-10006

  Schreiber, F ^a,b,c,d   Gerstenberg, M C ^c,e   Dosch, H ^a,b   Scoles, G ^c  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c Princeton University   (United States)

^d UNIVERSITY OF OXFORD   (United Kingdom)

^e NOVO NORDISK A S   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

GRAZING INCIDENCE DIFFRACTION (GID);

MELTING; PHASE TRANSITIONS; VAN DER WAALS FORCES; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

SELF ASSEMBLY;

EID: 0344514151     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la030337p     Document Type: Article

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30. Thermal desorption experiments of PTCDA on bare Au(111) show that only the first monolayer (about 3 Å above the Au(111) surface) and, to a small degree, the second monolayer (distance about 6 Å) experience a significant interaction with the substrate (ref 15). This suggests that for the present case with a SAM spacer layer, for which the first PTCDA layer is at a distance of around 16 Å away from the substrate, the interaction with the Au substrate is indeed weak.