Gap-based MIS Capacitors Using a SiN Gate Dielectric

Materials Research Society Symposium - Proceedings

Volumn 764, Issue , 2003, Pages 321-325

  Chen, A ^a   Woodall, J ^a   Wang, X W ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DENSITY (SPECIFIC GRAVITY); ELECTRIC FIELDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON NITRIDE; STRESS ANALYSIS; SYNTHESIS (CHEMICAL);

CHARGE DENSITY; GATE DIELECTRIC;

MOS CAPACITORS;

EID: 0344496703     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-764-c4.6     Document Type: Conference Paper

References (11)

1. M. Rubenstein, J. Electrochem. Soc., 113, 540 (1966)
2. Y. Kato, K.M Geib, R.G. Gann, P.R. Brusenback and C.W. Wilmsen, J. Vac. Sci. Technol, A 2(2), 588 (1984)
3. J.H. Epple, K.L. Chang, G.W. Pickrell, K.Y. Cheng and K.C. Hsieh, Appl. Phy. Lett., 77(8), 1161 (2000)
4. F. Ermanis and B. Schwartz, J. Electrochem. Soc., 121, 1665 (1974)
5. J.S. Tzeng, Y.K. Su and M.T. Shih, J. Electrochem. Soc., 133, 772 (1986)
6. G.P. Schwartz, G.J. Gualtieri, J.E. Griffiths, C.D. Thurmond and B. Schwartz, J. Electrochem. Soc., 127, 2488 (1980)
7. S.M. Spitzer, B. Schwartz and M. Kuhn, J. Electrochem. Soc., 120, 669 (1973)
8. T.Ikoma and H. Yokomizo, IEEE Trans. Elec. Dev., 521, (1976)
9. G. Weimann, Thin Solid Films, 56, 173 (1979)
10. T.P.Ma, IEEE Trans. Elec. Dev., 45, 680 (1998)
11. Gaffey, L.J.Guido, X.W.Wang, T.P.Ma, IEEE Trans. Elec. Dev., 48, 458 (2001)