Fabrication and Characterization of Wafer-Bonded GaInAsSb Epitaxy for Monolithically Interconnected Thermophotovoltaic Devices

Materials Research Society Symposium - Proceedings

Volumn 763, Issue , 2003, Pages 91-97

  Wang, C A ^a   Shiau, D A ^a   Murphy, P O ^a   O'Brien, P W ^a   Huang, R K ^a   Connors, M K ^a   Anderson, A C ^a   Depoy, D M ^b   Nichols, G ^b   Palmisiano, M N ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LOCKHEED MARTIN   (United States)

^c Bechtel Bettisk Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVES; ELECTRIC POTENTIAL; ENERGY CONVERSION; ENERGY GAP; PHOTOLUMINESCENCE; PHOTONS; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; RESIDUAL STRESSES; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

BACK SURFACE REFLECTORS; ELECTRICAL ISOLATION; PHOTON RECYCLING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0344496683     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-763-b2.7     Document Type: Conference Paper

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