Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates

Applied Physics Letters

Volumn 75, Issue 13, 1999, Pages 1836-1838

  Ma, Wenquan ^a   Nötzel, Richard ^a   Ramsteiner, Manfred ^a   Jahn, Uwe ^a   Schönherr, Hans Peter ^a   Kostial, Helmar ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

SELECTIVE CARRIER INJECTION;

LIGHT EMITTING DIODES;

EID: 0344210427     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124844     Document Type: Article

References (11)

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