Optical and structural properties of ZnSe/GaAs interfaces

Applied Surface Science

Volumn 112, Issue , 1997, Pages 165-170

  Garcia Rocha M ^a   Lopez Luna E ^a   De Melo, O ^a,c   Hernandez Calderon I ^a   Sitter, H ^b   Andreev, A Yu ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c UNIVERSITY OF HAVANA   (Cuba)

Author keywords

Auger; Critical thickness; Photoconductivity; Structural properties; X ray diffraction; ZnSe; ZnSe GaAs heterostructures

Indexed keywords

HETEROJUNCTIONS; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SELENIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; STRUCTURE (COMPOSITION); SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION;

FILM THICKNESS; PHOTOCURRENT;

INTERFACES (MATERIALS);

EID: 0344160568     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00981-6     Document Type: Article

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