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Volumn 159, Issue 1-4, 1996, Pages 703-708

Structural properties of ZnSe/GaAs(100) heterostructures with engineered band offsets

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; DIFFUSION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SYNCHROTRON RADIATION; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0030562528     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00820-9     Document Type: Article
Times cited : (14)

References (12)
  • 5
    • 0039577364 scopus 로고
    • II-VI blue/green laser diodes
    • Eds. R.L. Gunshor and A.V. Nurmikko, and references therein
    • A. Franciosi, L. Vanzetti, A. Bonanni, L. Sorba, G. Bratina and G. Biasiol, in: II-VI Blue/Green Laser Diodes, Eds. R.L. Gunshor and A.V. Nurmikko, Proc. SPIE 2346 (1994) 100, and references therein.
    • (1994) Proc. SPIE , vol.2346 , pp. 100
    • Franciosi, A.1    Vanzetti, L.2    Bonanni, A.3    Sorba, L.4    Bratina, G.5    Biasiol, G.6
  • 9
    • 0040762971 scopus 로고    scopus 로고
    • note
    • The use of a mass spectrometer which was not at the sample position may in principle yield differences in the measured BPRs relative to Refs. [7,8].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.