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Volumn 159, Issue 1-4, 1996, Pages 703-708
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Structural properties of ZnSe/GaAs(100) heterostructures with engineered band offsets
e
FOTONA D D
(Slovenia)
h
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
COMPOSITION;
DIFFUSION;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
STOICHIOMETRY;
SYNCHROTRON RADIATION;
X RAY CRYSTALLOGRAPHY;
X RAY PHOTOELECTRON SPECTROSCOPY;
ATOMIC INTERDIFFUSION;
BAND DISCONTINUITIES;
ENGINEERED BAND OFFSETS;
INTERFACE COMPOSITION;
STRUCTURAL PROPERTIES;
HETEROJUNCTIONS;
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EID: 0030562528
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00820-9 Document Type: Article |
Times cited : (14)
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References (12)
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