Structural properties of ZnSe/GaAs(100) heterostructures with engineered band offsets

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 703-708

  Bratina, G ^a,e   Vanzetti, L ^b,f   Bonanni, A ^a   Sorba, L ^b,g   Paggel, J J ^h   Franciosi, A ^a,b   Peluso, T ^c,d   Tapfer, L ^d  

^a University of Minnesota   (United States)

^b Lab Tecnologie Avanzate S   (Italy)

^c UNIVERSITY OF SALENTO   (Italy)

^d Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

^e FOTONA D D   (Slovenia)

^f Centro Materiali Biofisica Medica   (Italy)

^g Istituto ICMAT del CNR   (Italy)

^h NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; DIFFUSION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SYNCHROTRON RADIATION; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC INTERDIFFUSION; BAND DISCONTINUITIES; ENGINEERED BAND OFFSETS; INTERFACE COMPOSITION; STRUCTURAL PROPERTIES;

HETEROJUNCTIONS;

EID: 0030562528     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00820-9     Document Type: Article

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