Carrier trapping into single GaAs quantum wires studied by variable temperature near-field spectroscopy

Ultramicroscopy

Volumn 71, Issue 1-4, 1998, Pages 205-212

  Richter, A ^a   Suptitz M ^a   Lienau, Ch ^a   Elsaesser, T ^a   Ramsteiner, M ^b   Notzel R ^b   Ploog, K H ^b  

^a MAX BORN INSTITUT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Near field optics; Photoluminescence; Quantum wires; Scanning optical microscopy; Spectroscopy

Indexed keywords

LIGHT ABSORPTION; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; SURFACES;

NEAR FIELD OPTICS; SCANNING OPTICAL MICROSCOPY; VARIABLE TEMPERATURE NEAR FIELD SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WIRES;

ARTICLE; LUMINESCENCE; OPTICS; SCANNING NEAR FIELD OPTICAL MICROSCOPY; SPECTROSCOPY; TEMPERATURE;

EID: 0344110264     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00073-9     Document Type: Article

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